Analog Switching and Artificial Synaptic Behavior of Ag/SiO x :Ag/TiO x /p++-Si Memristor Device
Abstract In this study, by inserting a buffer layer of TiO x between the SiO x :Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiO x :Ag/TiO x /p++-Si by a physical vapor deposition process, in which the filament growth and mounting handlebar rupture can be efficiently controlled during analog