Analog Switching and Artificial Synaptic Behavior of Ag/SiO x :Ag/TiO x /p++-Si Memristor Device

Analog Switching and Artificial Synaptic Behavior of Ag/SiO x :Ag/TiO x /p++-Si Memristor Device

Blog Article

Abstract In this study, by inserting a buffer layer of TiO x between the SiO x :Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiO x :Ag/TiO x /p++-Si by a physical vapor deposition process, in which the filament growth and mounting handlebar rupture can be efficiently controlled during analog switching.The synaptic characteristics of the memristor device with a wide range of resistance change for weight modulation by implementing positive or negative pulse trains have been investigated extensively.Several learning and memory functions have been achieved simultaneously, Butter Dish including potentiation/depression, paired-pulse-facilitation (PPF), short-term plasticity (STP), and STP-to-LTP (long-term plasticity) transition controlled by repeating pulses more than a rehearsal operation, and spike-time-dependent-plasticity (STDP) as well.Based on the analysis of logarithmic I-V characteristics, it has been found that the controlled evolution/dissolution of conductive Ag-filaments across the dielectric layers can improve the performance of the testing memristor device.